Process and Performance of Copper TSVs
نویسندگان
چکیده
The difference between the performance of TSVs manufactured using SF6/O2 plasma etching or a Bosch process is explored through simulations. The geometric ratio of the sample TSV is approximately 5μm:58μm. The electrical performance of the devices is explored through capacitance and resistance extraction, while the reliability is analyzed using thermo-mechanical and electromigration simulations with an applied current density of 2MA/cm. It is found that the plasma-etched TSV experiences higher tapering on the sidewalls, resulting in a higher TSV resistance and electromigration-induced stress.
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